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KMB12F-KMB16F,KMB110F ASEMI参数规格

器件名称: KMB12F-KMB16F,KMB110F ASEMI参数规格
功能描述: KMB12F-KMB16F,KMB110F ASEMI参数规格
文件大小: 156.06KB    共2页
生产厂商: AMD
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简  介:KMB12F-KMB110F Schottky Surface Mount Flat Bridge Rectifier Major Ratings and Characteristics IF(AV) VRRM IFSM VF Tj max。 Features ● ● ● ● ● ● ● 1。0 A 20 V to 100 V 30 A 0。50 V, 0。55V,0。70 V, 0。85V 125 °C 0。6 + 0。2 MINI-SOP ● Low profile package Ideal for automated placement Ultrafast reverse recovery time Low power losses, high efficiency Low forward voltage drop High surge capability High temperature soldering: 260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC 0。25 + 0。1 1。5 + 0。2 0。65 0。65 + 。7 + 4 4。7 7。0 MAX。 4。0 + 0。2 _ ~ + ~ + 0。2 Mechanical Date ● ● ● Case: MBF molded plastic body over Schottky barrier chips Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D Polarity: Polarity symbols marked on body ° 0。2 1。5 + 0。2 0。9 + 0。2 2。5 Dimensions in millimeters(1mm =0。0394") Maximum Ratings & Thermal Characteristics & Electrical Characteristics (TA = 25 C unless otherwise noted) Symbol KMB12F KMB14F KMB16F KMB18F KMB110F UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0。2×0。2"(5。0×5。0mm)copper pad area Peak forward surge current 8。3 ms single half sine-wave superimposed on rated load Maximum instantaneous forwad voltage at 1。0A Maximum DC reverse current TA = 25 ℃ at Rated DC blocking voltage TA = 100℃ Typical Junction Capacitance at 4。0V,1。0MHz Typical Thermal resistance (Note1) Operating junction temperature ran……
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KMB12F-KMB16F,KMB110F ASEMI参数规格 KMB12F-KMB16F,KMB110F ASEMI参数规格 AMD
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